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Friday, July 24, 2020 | History

2 edition of magnetophonon effect found in the catalog.

magnetophonon effect

R. J. Nicholas

magnetophonon effect

by R. J. Nicholas

  • 343 Want to read
  • 14 Currently reading

Published by Pergamon Press in Oxford, England, New York .
Written in English

    Subjects:
  • Phonons.,
  • Electron-phonon interactions.

  • Edition Notes

    StatementR.J. Nicholas.
    SeriesProgress in quantum electronics -- v. 10, no. 1 (1985), Progress in quantum electronics -- v. 10, pt. 1.
    Classifications
    LC ClassificationsQC680 .P74 v.10 no.1
    The Physical Object
    Pagination75 p. :
    Number of Pages75
    ID Numbers
    Open LibraryOL22112637M
    ISBN 100080336612

    COVID Resources. Reliable information about the coronavirus (COVID) is available from the World Health Organization (current situation, international travel).Numerous and frequently-updated resource results are available from this ’s WebJunction has pulled together information and resources to assist library staff as they consider how to handle . The magnetophonon effect in high purity epitaxial n-type GaAs and InP has been observed to 15 kbar at K using a non-magnetic high pressure apparatus constructed largely of Ti and designed for use with a 90 kG solenoid magnet. The magnetic field shifts of the rho xx magnetophonon extrema.

    Screening effects are included within the static Thomas-Fermi approximation. It is demonstrated that phonon confinement lowers the polaron effects. Special attention is paid to the magnetophonon. To avoid such effect and to measure the magnetophonon effect accurately, the first derivative method of the magnetoresistance is prorosed for the magnetophonon measurements as the best method. It is also shown that the oscillatory component of the magnetophonon resonance can be obtained by numerical integration of the first derivative signals.

    The magnetophonon effect in two dimensions (R.J. Nicholas). The energy spectrum and magneto-optics in band-inverting heterojunctions (O.A. Pankratov and B. A. Volkov). The Magnetophonon Effect in n-InSb. Robin Barber. University of North Texas. Optical Absorption of Sungass Lenses and Sunscreens. Urszula Tajchman. Post Use Book Review-- Thermodynamics, an Engineering Approach, Y.A. Cengel and M.A. Boles. Tracey Cobel. Thiel College. Resources For. Prospective Members Chapters Advisors.


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Magnetophonon effect by R. J. Nicholas Download PDF EPUB FB2

The book then elaborates on a comprehensive review of the experimental aspects of the SdH effect; magnetoimpurity resonances in semiconductor transport; and magnetophonon resonance.

The selection is a highly recommended reference for scientists and readers interested in the Landau level spectroscopy. This article is a review of the magnetophonon effect, covering its origins, uses and the information which derives from it.

The magnetophonon effect arises due to resonant phonon emission or absorption by free charge carriers in a solid in a high magnetic by:   The book then elaborates on a comprehensive review of the experimental aspects of the SdH effect; magnetoimpurity resonances in semiconductor transport; and magnetophonon resonance.

The selection is a highly recommended reference for scientists and readers interested in the Landau level Edition: 1. —The magnetophonon effect is a useful tool for studying the properties of semiconductors - band edge effective mass determination ; — investigation of. Abstract. The effect of electric field on the magnetophonon structure has been investigated by several workers in n-InSb at 77K with main emphasis on the mechanisms of the shift of the resonance extrema to higher magnetic fields with increasing electric field in the transverse configuration [1–3].Cited by: 2.

Abstract. New types of magnetophonon phenomena observed in narrow gap semiconductors under high electric field are presented: (1) magnetophonon resonance recombination with emission of two TA-phonons in LPE-HgTe and LPE-Hg 1-x Mn x Te; and (2) magnetophonon resonance trapping of electrons with emission of multiple LO-phonons in Hg 1-x Cd x Te.

It is. The oscillations are periodic ThE MAGNETOPHONON EFFECT IN n-PbTe Magnetophonon effect book. 12,No.7 FIG. The transverse magnetoresistance ojan n-PbTe ( IOcm3)at77withJl [] and H 11( Po is the zero field resistivity, ~p = p(H) Po, and dRfdH is the derivative of the mag- netoresistance with respect to H.

CHAPTER 13 - The Magnetophonon Effect in Two Dimensions. R.J. NICHOLAS. Pages Download PDF; select article CHAPTER 14 - The Energy Spectrum and Magnetooptics of Band-Inverting Heterojunctions Book chapter Full text access CHAPTER 18 - The Shubnikov–de Haas Effect in Semiconductors: A Comprehensive Review of Experimental.

Solid State Communications, Vol. 18, pp. —, Pergamon Press. Printed in Great Britain THE LONGITUDINAL MAGNETOPHONON EFFECT IN SEMICONDUCTORS CONTAINING MAGNETIC IMPURITIES J. Kossut and W. Walukiewicz Institute of Physics, Polish Academy of Sciences, Warsaw (Received 11 July by C.

The magnetophonon effect in III-V semiconducting compounds. Phys. C Solid State Phys. 1, (). ADS Article Google Scholar Nicholas, R. The magnetophonon effect. The magnetophonon effect in high purity epitaxial n-type GaAs and InP has been observed to 15 kbar at K using a non-magnetic high pressure apparatus constructed largely of Ti and designed for use with a 90 kG solenoid magnet.

The magnetic field shifts of the rho xx magnetophonon extrema. Books. Publishing Support. Login. Reset your password. If you have a user account, you will need to reset your password the next time you login. You will only need to do this once. Find out more. IOPscience login / Sign Up.

Please note. The Magnetophonon Effect in Two Dimensions The Energy Spectrum and Magneto-Optics in Band-Inverting Heterojunctions Electrodynamics of Two-Dimensional Electron Systems in High Magnetic Fields Part IV Transport Landau Emission The Shubnikov-de Haas Effect: An Introduction to the Theory Magnetophonon oscillations due to L.O.

phonon absorption have been observed in GaAs-GaA1As, GaInAs-InP and GaInAs-AlInAs heterojunctions and superlattices. This has been used to show that the two-dimensional behaviour persists up to K. GaAs-GaA1As and GaInAs-InP hetero-junctions are dominated by scattering from ‘GaAs-like’ L.O.

phonons. The book then elaborates on a comprehensive review of the experimental aspects of the SdH effect; magnetoimpurity resonances in semiconductor transport; and magnetophonon resonance. The selection is a highly recommended reference for scientists and readers interested in the Landau level cturer: North Holland.

We have investigated magnetophonon (MP) resonance oscillations in Hg 1−x Cd x Te at various temperatures for samples with x≂ and x≂ using magnetic field modulation and lock‐in amplifier techniques.

Analysis of the MP resonant field positions with a three band model allowed the determination of the fundamental energy gap E g, the band‐edge effective mass, and the. Abstract.

A new type of magnetophonon effect associated with a recombination process with two TA-phonon emissions is studied in diluted magnetic semiconductors Hg l−x−y Cd x Mn y Te by using high quality LPE crystals. The band parameters are determined for the zero-gap region from the analysis of experimental results of magnetophonon resonance (MPR) recombination.

Magnetophonon effect has been studied in the transverse magnetoresistance of high purity epitaxial n-InP at temperatures between 77 and K, by adopting the magnetic field modulation and phase sensitive second harmonic detection technique.

Up to the 10th extrema are resolved at 88 K. The band edge effective mass is estimated to be ±0. Its aim is to determine the effective mass of the conduction electrons in a high purity sample of n type InSb by means of the magnetophonon effect. Read more Article. effect, widening the channel makes our measurement more sensitive to bulk phenomena rather than edge effects.

Width dependent magnetophonon oscillations The main observation of our work is presented in Figure. 1e, which plots the resistance (R xx) of a 15 m wide Hall bar (Fig.

1d) as a function of B, at two T and fixed n. Cite this paper as: Barker J.R., Magnusson B. () Theory of the Hot Electron Magnetophonon Effect.

In: Pilkuhn M.H. (eds) Proceedings of the Twelfth International Conference on the Physics of Semiconductors. Magnetophonon effect in a nonparabolic band: type InSb H.

Kahlert Physical Review B 18 Crossref. Phonon-assisted cyclotron resonance in semiconductors L. I. Korovin et al physica status solidi (b) 90 11 Crossref ADS. A Study of Magnetophonon Effect in n-InSb Using Field Modulation Technique.The book then elaborates on a comprehensive review of the experimental aspects of the SdH effect; magnetoimpurity resonances in semiconductor transport; and magnetophonon selection is a highly recommended reference for scientists and readers interested in the Landau level spectroscopy.